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2SA1586-GR,LF(T

Manufacturer

TOSHIBA

data-sheet
Data sheet
Data sheet
2SA1586-GR,LF(T) is utilized in automotive applications, particularly in signal amplification and switching circuits. Its robust design and AEC-Q101 compliance make it ideal for use in automotive control systems, power management, and other critical electronic functions requiring reliable performance under varying conditions.
Detailed specification
Detailed specification
Trans GP BJT PNP 50V 0.15A 100mW Automotive AEC-Q101 3-Pin USM T/R
Trans GP BJT PNP 50V 0.15A 100mW Automotive AEC-Q101 3-Pin USM T/R
Description
Description
The 2SA1586-GR,LF(T) from Toshiba is a high-performance PNP bipolar junction transistor (BJT) designed for automotive applications. It features a maximum collector-emitter voltage (Vce) of 50V and a collector current (Ic) rating of 0.15A, with a power dissipation of 100mW. This transistor is compliant with AEC-Q101 standards, ensuring reliability in automotive environments. The device comes in a compact 3-pin USM package, making it suitable for space-constrained designs while providing excellent thermal and electrical performance.
The 2SA1586-GR,LF(T) from Toshiba is a high-performance PNP bipolar junction transistor (BJT) designed for automotive applications. It features a maximum collector-emitter voltage (Vce) of 50V and a collector current (Ic) rating of 0.15A, with a power dissipation of 100mW. This transistor is compliant with AEC-Q101 standards, ensuring reliability in automotive environments. The device comes in a compact 3-pin USM package, making it suitable for space-constrained designs while providing excellent thermal and electrical performance.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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