2PB709BSL,215
Manufacturer
NXP
Data sheet
Data sheet
Specification
Specification
NEXPERIA 2PB709 - SMALL SIGNAL B
NEXPERIA 2PB709 - SMALL SIGNAL B
Detailed specification
Detailed specification
Bipolar (BJT) Transistor PNP 50 V 200 mA 200MHz 250 mW surface-mounted TO-236AB
Bipolar (BJT) Transistor PNP 50 V 200 mA 200MHz 250 mW surface-mounted TO-236AB
Description
Description
The NEXPERIA 2PB709 is a small signal PNP bipolar junction transistor (BJT) designed for high-frequency applications. It operates with a maximum collector-emitter voltage of 50 V and can handle a collector current of up to 200 mA, making it suitable for various switching and amplification tasks. With a transition frequency of 200 MHz and a power dissipation of 250 mW, this surface-mounted device is housed in a compact TO-236AB package, ensuring efficient thermal management and space-saving design in electronic circuits.
The NEXPERIA 2PB709 is a small signal PNP bipolar junction transistor (BJT) designed for high-frequency applications. It operates with a maximum collector-emitter voltage of 50 V and can handle a collector current of up to 200 mA, making it suitable for various switching and amplification tasks. With a transition frequency of 200 MHz and a power dissipation of 250 mW, this surface-mounted device is housed in a compact TO-236AB package, ensuring efficient thermal management and space-saving design in electronic circuits.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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