2PB709BSL,215
Manufacturer
NEXPERIA
Data sheet
Data sheet
Specification
Specification
TRANS PNP 50V 0.2A TO236AB
TRANS PNP 50V 0.2A TO236AB
Detailed specification
Detailed specification
Bipolar (BJT) Transistor PNP 50 V 200 mA 200MHz 250 mW surface-mounted TO-236AB
Bipolar (BJT) Transistor PNP 50 V 200 mA 200MHz 250 mW surface-mounted TO-236AB
Description
Description
The Nexperia 2PB709BSL is a PNP bipolar junction transistor designed for general-purpose applications. It operates at a collector-emitter voltage of 50 V and a collector current of 200 mA, with a maximum power dissipation of 250 mW. This surface-mounted device (TO-236AB) features two current gain selections and is suitable for switching and amplification tasks in various electronic circuits.
The Nexperia 2PB709BSL is a PNP bipolar junction transistor designed for general-purpose applications. It operates at a collector-emitter voltage of 50 V and a collector current of 200 mA, with a maximum power dissipation of 250 mW. This surface-mounted device (TO-236AB) features two current gain selections and is suitable for switching and amplification tasks in various electronic circuits.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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