2PA1576R-QX
Manufacturer
NEXPERIA
Data sheet
Data sheet
Specification
Specification
2PA1576R-Q/SOT323/SC-70
2PA1576R-Q/SOT323/SC-70
Detailed specification
Detailed specification
Bipolar (BJT) Transistor PNP 50 V 150 mA 100MHz 200 mW surface-mounted SOT-323
Bipolar (BJT) Transistor PNP 50 V 150 mA 100MHz 200 mW surface-mounted SOT-323
Description
Description
The 2PA1576R-Q is a PNP bipolar junction transistor (BJT) in a compact SOT323 (SC-70) surface-mounted package. It supports a maximum collector-emitter voltage of 50 V, a collector current of 150 mA, and a transition frequency of 100 MHz. This general-purpose transistor is suitable for low-voltage and low-current applications, with a typical collector capacitance of 2.5 pF.
The 2PA1576R-Q is a PNP bipolar junction transistor (BJT) in a compact SOT323 (SC-70) surface-mounted package. It supports a maximum collector-emitter voltage of 50 V, a collector current of 150 mA, and a transition frequency of 100 MHz. This general-purpose transistor is suitable for low-voltage and low-current applications, with a typical collector capacitance of 2.5 pF.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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