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2N7002-G

Manufacturer

ON SEMICONDUCTOR

data-sheet
Data sheet
Data sheet
The 2N7002-G is suitable for industrial applications, particularly in low-voltage, low-current scenarios such as small servo motor control and power MOSFET gate drivers. Its robust design ensures reliable performance in various switching applications, making it ideal for engineers and technicians in the electronics field.
Specification
Specification
FET 60V 5.0 OHM SOT23
FET 60V 5.0 OHM SOT23
Detailed specification
Detailed specification
N-Channel 60 V 115mA (Tc) 200mW (Tc) surface-mounted SOT-23-3
N-Channel 60 V 115mA (Tc) 200mW (Tc) surface-mounted SOT-23-3
Description
Description
The 2N7002-G is an N-Channel enhancement mode field effect transistor (FET) designed for low-voltage, low-current applications. It features a maximum drain-to-source voltage of 60V, a continuous drain current of 115mA, and a low on-state resistance (RDS(on)) of 5.0 Ohm. This device is housed in a SOT-23 package, providing reliable and fast switching performance.
The 2N7002-G is an N-Channel enhancement mode field effect transistor (FET) designed for low-voltage, low-current applications. It features a maximum drain-to-source voltage of 60V, a continuous drain current of 115mA, and a low on-state resistance (RDS(on)) of 5.0 Ohm. This device is housed in a SOT-23 package, providing reliable and fast switching performance.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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Other manufacturers
2N7002-G is also available from the following manufacturers
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