2N7002-G
Manufacturer
MICROCHIP TECHNOLOGY
Data sheet
Data sheet
Specification
Specification
MOSFET N-CH 60V 115MA SOT23
MOSFET N-CH 60V 115MA SOT23
Detailed specification
Detailed specification
N-Channel 60 V 115mA (Tj) 360mW (Ta) surface-mounted SOT-23 (TO-236AB)
N-Channel 60 V 115mA (Tj) 360mW (Ta) surface-mounted SOT-23 (TO-236AB)
Description
Description
The 2N7002 is an N-Channel MOSFET with a maximum Drain-to-Source Voltage (BVDSS) of 60V and a continuous Drain Current (ID) of 115mA. It features low on-state resistance (RDS(on)) of 7.5Ω at VGS of 5V and operates efficiently in a wide temperature range from -55°C to +150°C. This surface-mounted device is ideal for applications requiring fast switching speeds and low power drive requirements.
The 2N7002 is an N-Channel MOSFET with a maximum Drain-to-Source Voltage (BVDSS) of 60V and a continuous Drain Current (ID) of 115mA. It features low on-state resistance (RDS(on)) of 7.5Ω at VGS of 5V and operates efficiently in a wide temperature range from -55°C to +150°C. This surface-mounted device is ideal for applications requiring fast switching speeds and low power drive requirements.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
Other manufacturers
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