2N6661
Manufacturer
SILICONIX
Data sheet
Data sheet
Specification
Specification
MOSFET N-CH 90V 860MA TO39
MOSFET N-CH 90V 860MA TO39
Detailed specification
Detailed specification
N-Channel 90 V 860mA (Tc) 725mW (Ta), 6.25W (Tc) Through Hole TO-39
N-Channel 90 V 860mA (Tc) 725mW (Ta), 6.25W (Tc) Through Hole TO-39
Description
Description
The 2N6661 is an N-Channel MOSFET with a maximum Drain-Source Voltage (VDS) of 90V and a continuous Drain Current (ID) of 860mA at a case temperature (Tc) of 25°C. It features a low on-state resistance (RDS(on)) of 3.6Ω at VGS = 10V, low input capacitance of 35pF, and fast switching speed of 6ns, making it suitable for high-speed applications.
The 2N6661 is an N-Channel MOSFET with a maximum Drain-Source Voltage (VDS) of 90V and a continuous Drain Current (ID) of 860mA at a case temperature (Tc) of 25°C. It features a low on-state resistance (RDS(on)) of 3.6Ω at VGS = 10V, low input capacitance of 35pF, and fast switching speed of 6ns, making it suitable for high-speed applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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