2N6661
Manufacturer
MICROCHIP TECHNOLOGY
Data sheet
Data sheet
Specification
Specification
MOSFET N-CH 90V 350MA TO39
MOSFET N-CH 90V 350MA TO39
Detailed specification
Detailed specification
N-Channel 90 V 350mA (Tj) 6.25W (Tc) Through Hole TO-39
N-Channel 90 V 350mA (Tj) 6.25W (Tc) Through Hole TO-39
Description
Description
The 2N6661 is an N-Channel enhancement-mode MOSFET designed for high-performance applications. It features a maximum drain-to-source voltage of 90V and a continuous drain current of 350mA, with a power dissipation capability of 6.25W. The device exhibits low on-state resistance (RDS(on)) of 4.0Ω at VGS=10V and fast switching speeds, making it suitable for various applications including motor controls, amplifiers, and power supply circuits.
The 2N6661 is an N-Channel enhancement-mode MOSFET designed for high-performance applications. It features a maximum drain-to-source voltage of 90V and a continuous drain current of 350mA, with a power dissipation capability of 6.25W. The device exhibits low on-state resistance (RDS(on)) of 4.0Ω at VGS=10V and fast switching speeds, making it suitable for various applications including motor controls, amplifiers, and power supply circuits.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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