2N6660
Manufacturer
SILICONIX
Data sheet
Data sheet
Specification
Specification
MOSFET N-CH 60V 990MA TO205AD
MOSFET N-CH 60V 990MA TO205AD
Detailed specification
Detailed specification
N-Channel 60 V 990mA (Tc) 725mW (Ta), 6.25W (Tc) Through Hole TO-205AD (TO-39)
N-Channel 60 V 990mA (Tc) 725mW (Ta), 6.25W (Tc) Through Hole TO-205AD (TO-39)
Description
Description
The 2N6660 is an N-Channel MOSFET designed for high-efficiency switching applications. It operates at a maximum voltage of 60V and can handle a continuous drain current of 990mA at a case temperature (Tc) of 25°C. The device features a power dissipation capability of 725mW at ambient temperature (Ta) and can dissipate up to 6.25W at case temperature (Tc). Packaged in a TO-205AD (TO-39) through-hole configuration, this MOSFET is suitable for various electronic circuits requiring reliable performance in power management and signal switching.
The 2N6660 is an N-Channel MOSFET designed for high-efficiency switching applications. It operates at a maximum voltage of 60V and can handle a continuous drain current of 990mA at a case temperature (Tc) of 25°C. The device features a power dissipation capability of 725mW at ambient temperature (Ta) and can dissipate up to 6.25W at case temperature (Tc). Packaged in a TO-205AD (TO-39) through-hole configuration, this MOSFET is suitable for various electronic circuits requiring reliable performance in power management and signal switching.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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