2N6660
Manufacturer
MICROCHIP TECHNOLOGY
Data sheet
Data sheet
Specification
Specification
MOSFET N-CH 60V 410MA TO39
MOSFET N-CH 60V 410MA TO39
Detailed specification
Detailed specification
N-Channel 60 V 410mA (Ta) 6.25W (Tc) Through Hole TO-39
N-Channel 60 V 410mA (Ta) 6.25W (Tc) Through Hole TO-39
Description
Description
The 2N6660 is an N-Channel enhancement-mode MOSFET designed for high-performance applications. It features a maximum drain-to-source voltage of 60V and a continuous drain current of 410mA. With low on-state resistance (RDS(on)) of 3.0Ω at VGS=10V, it ensures efficient power handling. The device is suitable for motor controls, amplifiers, and power supply circuits, offering excellent thermal stability and fast switching speeds.
The 2N6660 is an N-Channel enhancement-mode MOSFET designed for high-performance applications. It features a maximum drain-to-source voltage of 60V and a continuous drain current of 410mA. With low on-state resistance (RDS(on)) of 3.0Ω at VGS=10V, it ensures efficient power handling. The device is suitable for motor controls, amplifiers, and power supply circuits, offering excellent thermal stability and fast switching speeds.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
Contact sales
Contact Petra or one of our other skilled sales representatives. They'll help you find the right service option.C