2N5430
Manufacturer
MICROCHIP TECHNOLOGY
Specification
Specification
NPN TRANSISTOR
NPN TRANSISTOR
Detailed specification
Detailed specification
Bipolar (BJT) Transistor
Bipolar (BJT) Transistor
Description
Description
The 2N5430 is a high-performance NPN bipolar junction transistor (BJT) designed for various amplification and switching applications. It features a maximum collector current of 1.5 A and a collector-emitter voltage rating of 60 V, making it suitable for medium power applications. The transistor is housed in a TO-220 package, ensuring efficient thermal management. With its low saturation voltage and fast switching capabilities, the 2N5430 is ideal for use in audio amplifiers, signal processing, and power management circuits, providing reliable performance in demanding environments.
The 2N5430 is a high-performance NPN bipolar junction transistor (BJT) designed for various amplification and switching applications. It features a maximum collector current of 1.5 A and a collector-emitter voltage rating of 60 V, making it suitable for medium power applications. The transistor is housed in a TO-220 package, ensuring efficient thermal management. With its low saturation voltage and fast switching capabilities, the 2N5430 is ideal for use in audio amplifiers, signal processing, and power management circuits, providing reliable performance in demanding environments.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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