2N5430
Manufacturer
CENTRAL SEMICONDUCTOR
Data sheet
Data sheet
Specification
Specification
TRANS NPN 100V 7A TO66
TRANS NPN 100V 7A TO66
Detailed specification
Detailed specification
Bipolar (BJT) Transistor NPN 100 V 7 A 30MHz 40 W Through Hole TO-66
Bipolar (BJT) Transistor NPN 100 V 7 A 30MHz 40 W Through Hole TO-66
Description
Description
The 2N5430 is a high-performance NPN bipolar junction transistor (BJT) designed for power applications. It features a maximum collector-emitter voltage (BVCBO) of 100 V, a maximum collector current (IC) of 7 A, and a maximum power dissipation (PD) of 40 W. With a transition frequency (fT) of 30 MHz and a saturation voltage (VCE(SAT)) of 2.0 V at IC, it is suitable for various high-frequency and high-current applications.
The 2N5430 is a high-performance NPN bipolar junction transistor (BJT) designed for power applications. It features a maximum collector-emitter voltage (BVCBO) of 100 V, a maximum collector current (IC) of 7 A, and a maximum power dissipation (PD) of 40 W. With a transition frequency (fT) of 30 MHz and a saturation voltage (VCE(SAT)) of 2.0 V at IC, it is suitable for various high-frequency and high-current applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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