2N3700
Manufacturer
ST MICROELECTRONICS
Data sheet
Data sheet
Specification
Specification
TRANS NPN 80V 1A TO18
TRANS NPN 80V 1A TO18
Detailed specification
Detailed specification
Bipolar (BJT) Transistor NPN 80 V 1 A 100 MHz 500 mW Through Hole TO-18
Bipolar (BJT) Transistor NPN 80 V 1 A 100 MHz 500 mW Through Hole TO-18
Description
Description
The 2N3700 is a high-performance NPN bipolar junction transistor (BJT) designed for various electronic applications. It features a maximum collector-emitter voltage of 80V and a collector current rating of 1A, making it suitable for power amplification and switching applications. With a transition frequency of 100MHz and a power dissipation capability of 500mW, this transistor is ideal for high-frequency circuits. Packaged in a TO-18 metal can, it offers robust performance in through-hole mounting configurations, ensuring reliability in demanding environments.
The 2N3700 is a high-performance NPN bipolar junction transistor (BJT) designed for various electronic applications. It features a maximum collector-emitter voltage of 80V and a collector current rating of 1A, making it suitable for power amplification and switching applications. With a transition frequency of 100MHz and a power dissipation capability of 500mW, this transistor is ideal for high-frequency circuits. Packaged in a TO-18 metal can, it offers robust performance in through-hole mounting configurations, ensuring reliability in demanding environments.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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