2N3700
Manufacturer
MICROCHIP TECHNOLOGY
Data sheet
Data sheet
Specification
Specification
TRANS NPN 80V 1A TO18
TRANS NPN 80V 1A TO18
Detailed specification
Detailed specification
Bipolar (BJT) Transistor NPN 80 V 1 A 500 mW Through Hole TO-18
Bipolar (BJT) Transistor NPN 80 V 1 A 500 mW Through Hole TO-18
Description
Description
The 2N3700 is a high-performance NPN bipolar junction transistor (BJT) designed for various electronic applications. It features a maximum collector-emitter voltage of 80V and a collector current rating of 1A, making it suitable for switching and amplification tasks. With a power dissipation capability of 500 mW, this transistor is housed in a TO-18 metal can package, ensuring robust thermal performance and reliability. Its compact size and efficient operation make it ideal for use in consumer electronics, industrial controls, and signal processing circuits.
The 2N3700 is a high-performance NPN bipolar junction transistor (BJT) designed for various electronic applications. It features a maximum collector-emitter voltage of 80V and a collector current rating of 1A, making it suitable for switching and amplification tasks. With a power dissipation capability of 500 mW, this transistor is housed in a TO-18 metal can package, ensuring robust thermal performance and reliability. Its compact size and efficient operation make it ideal for use in consumer electronics, industrial controls, and signal processing circuits.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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