2N3019
Manufacturer
ST MICROELECTRONICS
Data sheet
Data sheet
Specification
Specification
TRANS NPN 80V 1A TO39
TRANS NPN 80V 1A TO39
Detailed specification
Detailed specification
Bipolar (BJT) Transistor NPN 80 V 1 A 100 MHz 800 mW Through Hole TO-39
Bipolar (BJT) Transistor NPN 80 V 1 A 100 MHz 800 mW Through Hole TO-39
Description
Description
The 2N3019 is a silicon planar epitaxial NPN transistor housed in a TO-39 metal case, designed for high-current, high-frequency amplifier applications. It features a collector-emitter voltage of 80 V, a collector current of 1 A, and a transition frequency of 100 MHz, making it suitable for various electronic circuits requiring efficient amplification.
The 2N3019 is a silicon planar epitaxial NPN transistor housed in a TO-39 metal case, designed for high-current, high-frequency amplifier applications. It features a collector-emitter voltage of 80 V, a collector current of 1 A, and a transition frequency of 100 MHz, making it suitable for various electronic circuits requiring efficient amplification.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
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