logo

2N3019

Manufacturer

ST MICROELECTRONICS

data-sheet
Data sheet
Data sheet
2N3019 is used in industrial and consumer electronics applications, particularly in high-frequency amplifiers and switching circuits. Its high gain and low saturation voltage make it ideal for signal processing and amplification tasks in various electronic devices.
Specification
Specification
TRANS NPN 80V 1A TO39
TRANS NPN 80V 1A TO39
Detailed specification
Detailed specification
Bipolar (BJT) Transistor NPN 80 V 1 A 100 MHz 800 mW Through Hole TO-39
Bipolar (BJT) Transistor NPN 80 V 1 A 100 MHz 800 mW Through Hole TO-39
Description
Description
The 2N3019 is a silicon planar epitaxial NPN transistor housed in a TO-39 metal case, designed for high-current, high-frequency amplifier applications. It features a collector-emitter voltage of 80 V, a collector current of 1 A, and a transition frequency of 100 MHz, making it suitable for various electronic circuits requiring efficient amplification.
The 2N3019 is a silicon planar epitaxial NPN transistor housed in a TO-39 metal case, designed for high-current, high-frequency amplifier applications. It features a collector-emitter voltage of 80 V, a collector current of 1 A, and a transition frequency of 100 MHz, making it suitable for various electronic circuits requiring efficient amplification.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
Other manufacturers
2N3019 is also available from the following manufacturers
Contact sales
Contact Lukas or one of our other skilled sales representatives. They'll help you find the right service option.
Lukas Wallin
Upload BOM
Do you want to upload an entire BOM and get a ready-made quote within a few hours? Our salespeople will immediately take care of your request and get back to you.