2N3019
Manufacturer
MICROCHIP TECHNOLOGY
Data sheet
Data sheet
Specification
Specification
TRANS NPN 80V 1A TO5
TRANS NPN 80V 1A TO5
Detailed specification
Detailed specification
Bipolar (BJT) Transistor NPN 80 V 1 A 800 mW Through Hole TO-5
Bipolar (BJT) Transistor NPN 80 V 1 A 800 mW Through Hole TO-5
Description
Description
The 2N3019 is a high-performance NPN bipolar junction transistor (BJT) designed for various electronic applications. It features a maximum collector-emitter voltage of 80V and a collector current rating of 1A, making it suitable for medium power switching and amplification tasks. With a power dissipation capability of 800 mW, this TO-5 package transistor is ideal for through-hole mounting in circuit designs requiring reliable performance. Its robust construction ensures durability in demanding environments, making it a preferred choice for engineers.
The 2N3019 is a high-performance NPN bipolar junction transistor (BJT) designed for various electronic applications. It features a maximum collector-emitter voltage of 80V and a collector current rating of 1A, making it suitable for medium power switching and amplification tasks. With a power dissipation capability of 800 mW, this TO-5 package transistor is ideal for through-hole mounting in circuit designs requiring reliable performance. Its robust construction ensures durability in demanding environments, making it a preferred choice for engineers.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
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