2N2219A
Manufacturer
ON SEMICONDUCTOR
Data sheet
Data sheet
Specification
Specification
TRANS NPN 40V 0.8A TO39
TRANS NPN 40V 0.8A TO39
Detailed specification
Detailed specification
Bipolar (BJT) Transistor NPN 40 V 800 mA 800 mW Through Hole TO-39
Bipolar (BJT) Transistor NPN 40 V 800 mA 800 mW Through Hole TO-39
Description
Description
The 2N2219A from onsemi is a high-performance NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. It features a maximum collector-emitter voltage of 40V and can handle a collector current of up to 800mA, with a power dissipation rating of 800mW. Packaged in a TO-39 metal can, this transistor is suitable for through-hole mounting, providing robust thermal performance and reliability in various electronic circuits. Its versatility makes it ideal for use in audio amplifiers, signal processing, and power management applications.
The 2N2219A from onsemi is a high-performance NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. It features a maximum collector-emitter voltage of 40V and can handle a collector current of up to 800mA, with a power dissipation rating of 800mW. Packaged in a TO-39 metal can, this transistor is suitable for through-hole mounting, providing robust thermal performance and reliability in various electronic circuits. Its versatility makes it ideal for use in audio amplifiers, signal processing, and power management applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
Other manufacturers
2N2219A is also available from the following manufacturersContact sales
Contact Gabriella or one of our other skilled sales representatives. They'll help you find the right service option.C