2N2219A
Manufacturer
MICROCHIP TECHNOLOGY
Data sheet
Data sheet
Specification
Specification
TRANS NPN 50V 0.8A TO39
TRANS NPN 50V 0.8A TO39
Detailed specification
Detailed specification
Bipolar (BJT) Transistor NPN 50 V 800 mA 800 mW Through Hole TO-39 (TO-205AD)
Bipolar (BJT) Transistor NPN 50 V 800 mA 800 mW Through Hole TO-39 (TO-205AD)
Description
Description
The 2N2219A is a high-performance NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. It features a maximum collector-emitter voltage of 50V, a collector current rating of 800mA, and a power dissipation capability of 800mW. Packaged in a TO-39 (TO-205AD) metal can, this transistor is suitable for through-hole mounting, providing robust thermal performance and reliability in various electronic circuits. Its versatility makes it ideal for use in audio amplifiers, signal processing, and power management applications.
The 2N2219A is a high-performance NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. It features a maximum collector-emitter voltage of 50V, a collector current rating of 800mA, and a power dissipation capability of 800mW. Packaged in a TO-39 (TO-205AD) metal can, this transistor is suitable for through-hole mounting, providing robust thermal performance and reliability in various electronic circuits. Its versatility makes it ideal for use in audio amplifiers, signal processing, and power management applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
Other manufacturers
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