2N1711
Manufacturer
ST MICROELECTRONICS
Data sheet
Data sheet
Specification
Specification
TRANS NPN 50V 0.5A TO39
TRANS NPN 50V 0.5A TO39
Detailed specification
Detailed specification
Bipolar (BJT) Transistor NPN 50 V 500 mA 100MHz 800 mW Through Hole TO-39
Bipolar (BJT) Transistor NPN 50 V 500 mA 100MHz 800 mW Through Hole TO-39
Description
Description
The 2N1711 is a high-performance NPN bipolar junction transistor (BJT) designed for various electronic applications. It operates with a maximum collector-emitter voltage of 50V and can handle a collector current of up to 500mA. With a transition frequency of 100MHz and a power dissipation capability of 800mW, this transistor is suitable for high-frequency switching and amplification tasks. Packaged in a TO-39 metal can, it offers robust thermal performance and reliability in demanding environments, making it ideal for both consumer and industrial applications.
The 2N1711 is a high-performance NPN bipolar junction transistor (BJT) designed for various electronic applications. It operates with a maximum collector-emitter voltage of 50V and can handle a collector current of up to 500mA. With a transition frequency of 100MHz and a power dissipation capability of 800mW, this transistor is suitable for high-frequency switching and amplification tasks. Packaged in a TO-39 metal can, it offers robust thermal performance and reliability in demanding environments, making it ideal for both consumer and industrial applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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