2N1711
Manufacturer
MICROCHIP TECHNOLOGY
Specification
Specification
TRANS NPN 50V 0.5A TO5
TRANS NPN 50V 0.5A TO5
Detailed specification
Detailed specification
Bipolar (BJT) Transistor NPN 50 V 500 mA 800 mW Through Hole TO-5AA
Bipolar (BJT) Transistor NPN 50 V 500 mA 800 mW Through Hole TO-5AA
Description
Description
The 2N1711 is a high-performance NPN bipolar junction transistor (BJT) designed for various electronic applications. It features a maximum collector-emitter voltage of 50V and a collector current rating of 500mA, making it suitable for low to medium power switching and amplification tasks. The device is housed in a TO-5AA package, ensuring reliable thermal performance and ease of integration into circuit designs. With a power dissipation capability of 800mW, the 2N1711 is ideal for use in signal processing and control circuits.
The 2N1711 is a high-performance NPN bipolar junction transistor (BJT) designed for various electronic applications. It features a maximum collector-emitter voltage of 50V and a collector current rating of 500mA, making it suitable for low to medium power switching and amplification tasks. The device is housed in a TO-5AA package, ensuring reliable thermal performance and ease of integration into circuit designs. With a power dissipation capability of 800mW, the 2N1711 is ideal for use in signal processing and control circuits.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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