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1N4448TR

Manufacturer

VISHAY

data-sheet
Data sheet
Data sheet
1N4448TR is designed for use in small signal applications, including extreme fast switching circuits, signal rectification, and general-purpose electronic applications. Its characteristics make it suitable for industrial, consumer electronics, and telecommunications sectors, where reliability and efficiency are critical.
Specification
Specification
DIODE GEN PURP 100V 150MA DO35
DIODE GEN PURP 100V 150MA DO35
Detailed specification
Detailed specification
Diode 100 V 150mA Through Hole DO-204AH (DO-35)
Diode 100 V 150mA Through Hole DO-204AH (DO-35)
Description
Description
The 1N4448TR is a general-purpose silicon diode with a maximum repetitive peak reverse voltage of 100 V and a forward continuous current rating of 300 mA. It features a low forward voltage drop and fast switching capabilities, making it suitable for various applications in electronic circuits. The diode is housed in a DO-35 (DO-204AH) package, ensuring reliable performance in compact designs.
The 1N4448TR is a general-purpose silicon diode with a maximum repetitive peak reverse voltage of 100 V and a forward continuous current rating of 300 mA. It features a low forward voltage drop and fast switching capabilities, making it suitable for various applications in electronic circuits. The diode is housed in a DO-35 (DO-204AH) package, ensuring reliable performance in compact designs.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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Other manufacturers
1N4448TR is also available from the following manufacturers
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