1N4448TR
Manufacturer
VISHAY
Data sheet
Data sheet
Specification
Specification
DIODE GEN PURP 100V 150MA DO35
DIODE GEN PURP 100V 150MA DO35
Detailed specification
Detailed specification
Diode 100 V 150mA Through Hole DO-204AH (DO-35)
Diode 100 V 150mA Through Hole DO-204AH (DO-35)
Description
Description
The 1N4448TR is a general-purpose silicon diode with a maximum repetitive peak reverse voltage of 100 V and a forward continuous current rating of 300 mA. It features a low forward voltage drop and fast switching capabilities, making it suitable for various applications in electronic circuits. The diode is housed in a DO-35 (DO-204AH) package, ensuring reliable performance in compact designs.
The 1N4448TR is a general-purpose silicon diode with a maximum repetitive peak reverse voltage of 100 V and a forward continuous current rating of 300 mA. It features a low forward voltage drop and fast switching capabilities, making it suitable for various applications in electronic circuits. The diode is housed in a DO-35 (DO-204AH) package, ensuring reliable performance in compact designs.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
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