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1N4448TR

Manufacturer

ON SEMICONDUCTOR

data-sheet
Data sheet
Data sheet
1N4448TR is used in general-purpose applications, including signal processing, rectification, and power management in consumer electronics, telecommunications, and industrial equipment. Its robust specifications make it suitable for various electronic circuit designs requiring reliable performance.
Specification
Specification
DIODE GEN PURP 100V 200MA DO35
DIODE GEN PURP 100V 200MA DO35
Detailed specification
Detailed specification
Diode 100 V 200mA Through Hole DO-35
Diode 100 V 200mA Through Hole DO-35
Description
Description
The 1N4448TR is a general-purpose diode with a maximum repetitive reverse voltage of 100 V and a forward current rating of 200 mA. It features a DO-35 package and is suitable for various applications in electronic circuits requiring reliable rectification and switching. Its low forward voltage drop and fast switching capabilities make it ideal for signal processing and power management.
The 1N4448TR is a general-purpose diode with a maximum repetitive reverse voltage of 100 V and a forward current rating of 200 mA. It features a DO-35 package and is suitable for various applications in electronic circuits requiring reliable rectification and switching. Its low forward voltage drop and fast switching capabilities make it ideal for signal processing and power management.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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Other manufacturers
1N4448TR is also available from the following manufacturers
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