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1N4150TR

Manufacturer

VISHAY

data-sheet
Data sheet
Data sheet
1N4150TR is designed for general-purpose applications, particularly in computer and industrial sectors. Its characteristics make it ideal for high-speed switching and other electronic applications requiring reliable diode performance.
Specification
Specification
DIODE GEN PURP 50V 300MA DO35
DIODE GEN PURP 50V 300MA DO35
Detailed specification
Detailed specification
Diode 50 V 300mA Through Hole DO-204AH (DO-35)
Diode 50 V 300mA Through Hole DO-204AH (DO-35)
Description
Description
The 1N4150TR is a general-purpose silicon epitaxial planar diode with a maximum repetitive peak reverse voltage of 50 V and a forward current rating of 300 mA. It features low forward voltage drop and high forward current capability, making it suitable for high-speed switching applications. The diode is housed in a DO-35 (DO-204AH) package, ensuring reliable performance in various electronic circuits.
The 1N4150TR is a general-purpose silicon epitaxial planar diode with a maximum repetitive peak reverse voltage of 50 V and a forward current rating of 300 mA. It features low forward voltage drop and high forward current capability, making it suitable for high-speed switching applications. The diode is housed in a DO-35 (DO-204AH) package, ensuring reliable performance in various electronic circuits.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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Other manufacturers
1N4150TR is also available from the following manufacturers
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