1N4150TR
Manufacturer
VISHAY
Data sheet
Data sheet
Specification
Specification
DIODE GEN PURP 50V 300MA DO35
DIODE GEN PURP 50V 300MA DO35
Detailed specification
Detailed specification
Diode 50 V 300mA Through Hole DO-204AH (DO-35)
Diode 50 V 300mA Through Hole DO-204AH (DO-35)
Description
Description
The 1N4150TR is a general-purpose silicon epitaxial planar diode with a maximum repetitive peak reverse voltage of 50 V and a forward current rating of 300 mA. It features low forward voltage drop and high forward current capability, making it suitable for high-speed switching applications. The diode is housed in a DO-35 (DO-204AH) package, ensuring reliable performance in various electronic circuits.
The 1N4150TR is a general-purpose silicon epitaxial planar diode with a maximum repetitive peak reverse voltage of 50 V and a forward current rating of 300 mA. It features low forward voltage drop and high forward current capability, making it suitable for high-speed switching applications. The diode is housed in a DO-35 (DO-204AH) package, ensuring reliable performance in various electronic circuits.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
Contact sales
Contact Christian or one of our other skilled sales representatives. They'll help you find the right service option.C