1N4150TR
Manufacturer
ON SEMICONDUCTOR
Data sheet
Data sheet
Specification
Specification
DIODE GEN PURP 50V 200MA DO35
DIODE GEN PURP 50V 200MA DO35
Detailed specification
Detailed specification
Diode 50 V 200mA Through Hole DO-35
Diode 50 V 200mA Through Hole DO-35
Description
Description
The 1N4150TR is a high conductance ultra-fast diode with a maximum working inverse voltage of 50 V and an average rectified current of 200 mA. It features a forward voltage drop of 0.87 V at 200 mA and a reverse recovery time of 4.0 ns. The diode is housed in a DO-35 package and is suitable for various applications requiring efficient rectification and fast switching performance.
The 1N4150TR is a high conductance ultra-fast diode with a maximum working inverse voltage of 50 V and an average rectified current of 200 mA. It features a forward voltage drop of 0.87 V at 200 mA and a reverse recovery time of 4.0 ns. The diode is housed in a DO-35 package and is suitable for various applications requiring efficient rectification and fast switching performance.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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