1N1186A
Manufacturer
GENESIC SEMICONDUCTOR
Data sheet
Data sheet
Specification
Specification
DIODE GEN PURP 200V 40A DO5
DIODE GEN PURP 200V 40A DO5
Detailed specification
Detailed specification
Diode 200 V 40A Chassis, Stud Mount DO-5
Diode 200 V 40A Chassis, Stud Mount DO-5
Description
Description
The 1N1186A is a general-purpose silicon recovery diode with a repetitive peak reverse voltage (VRRM) of 200 V and a continuous forward current (IF) of 40 A. It features a high surge capability in a DO-5 chassis, making it suitable for various applications. The diode operates within a temperature range of -55 to 150 °C and is not ESD sensitive.
The 1N1186A is a general-purpose silicon recovery diode with a repetitive peak reverse voltage (VRRM) of 200 V and a continuous forward current (IF) of 40 A. It features a high surge capability in a DO-5 chassis, making it suitable for various applications. The diode operates within a temperature range of -55 to 150 °C and is not ESD sensitive.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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