XPH2R106NC,L1Q(O
Tillverkare
TOSHIBA
Datablad
Datablad
Detaljerad specifikation
Detaljerad specifikation
TOSHIBA - XPH2R106NC,L1Q(O - Effekt MOSFET, N Kanal, 60 V, 110 A, 0.0017 ohm, SOP Advance, ytmonterad
TOSHIBA - XPH2R106NC,L1Q(O - Effekt MOSFET, N Kanal, 60 V, 110 A, 0.0017 ohm, SOP Advance, ytmonterad
Beskrivning (eng)
Beskrivning (eng)
The TOSHIBA XPH2R106NC,L1Q(O) is a Power MOSFET featuring an N-channel configuration with a maximum drain-source voltage of 60 V and a continuous drain current rating of 110 A. It has a low on-state resistance of RDS(ON) = 1.7 mΩ (typ.) at VGS = 10 V, making it suitable for high-efficiency applications.
The TOSHIBA XPH2R106NC,L1Q(O) is a Power MOSFET featuring an N-channel configuration with a maximum drain-source voltage of 60 V and a continuous drain current rating of 110 A. It has a low on-state resistance of RDS(ON) = 1.7 mΩ (typ.) at VGS = 10 V, making it suitable for high-efficiency applications.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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