VP3203N8-G
Tillverkare
MICROCHIP TECHNOLOGY
Datablad
Datablad
Specifikation
Specifikation
MOSFET P-CH 30V 1.1A TO243AA
MOSFET P-CH 30V 1.1A TO243AA
Detaljerad specifikation
Detaljerad specifikation
P-Kanal 30 V 1.1A (Tj) 1.6W (Ta) ytmonterad TO-243AA (SOT-89)
P-Kanal 30 V 1.1A (Tj) 1.6W (Ta) ytmonterad TO-243AA (SOT-89)
Beskrivning (eng)
Beskrivning (eng)
The VP3203N8-G is a P-Channel MOSFET with a maximum drain-to-source voltage (BVDSS) of -30V and a continuous drain current (ID) of -1.1A. It features a low on-state resistance (RDS(ON)) of 0.6Ω at VGS = -10V and is housed in a TO-243AA (SOT-89) package. This device is designed for efficient switching and amplification applications, providing excellent thermal stability and low power drive requirements.
The VP3203N8-G is a P-Channel MOSFET with a maximum drain-to-source voltage (BVDSS) of -30V and a continuous drain current (ID) of -1.1A. It features a low on-state resistance (RDS(ON)) of 0.6Ω at VGS = -10V and is housed in a TO-243AA (SOT-89) package. This device is designed for efficient switching and amplification applications, providing excellent thermal stability and low power drive requirements.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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