VP3203N3-G
Tillverkare
MICROCHIP TECHNOLOGY
Datablad
Datablad
Specifikation
Specifikation
MOSFET P-CH 30V 650MA TO92-3
MOSFET P-CH 30V 650MA TO92-3
Detaljerad specifikation
Detaljerad specifikation
P-Kanal 30 V 650mA (Tj) 740mW (Ta) Genomgående hål TO-92-3
P-Kanal 30 V 650mA (Tj) 740mW (Ta) Genomgående hål TO-92-3
Beskrivning (eng)
Beskrivning (eng)
The VP3203N3-G is a P-Channel MOSFET with a maximum drain-to-source voltage (BVDSS) of -30V and a continuous drain current (ID) of -650mA. It features a low on-state resistance (RDS(on)) of 0.6Ω at VGS = -10V and ID = -3.0A. This device is designed for efficient switching and amplification in various applications, ensuring excellent thermal stability and low power drive requirements.
The VP3203N3-G is a P-Channel MOSFET with a maximum drain-to-source voltage (BVDSS) of -30V and a continuous drain current (ID) of -650mA. It features a low on-state resistance (RDS(on)) of 0.6Ω at VGS = -10V and ID = -3.0A. This device is designed for efficient switching and amplification in various applications, ensuring excellent thermal stability and low power drive requirements.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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