VP2206N3-G
Tillverkare
MICROCHIP TECHNOLOGY
Datablad
Datablad
Specifikation
Specifikation
MOSFET P-CH 60V 640MA TO92-3
MOSFET P-CH 60V 640MA TO92-3
Detaljerad specifikation
Detaljerad specifikation
P-Kanal 60 V 640mA (Tj) 740mW (Tc) Genomgående hål TO-92-3
P-Kanal 60 V 640mA (Tj) 740mW (Tc) Genomgående hål TO-92-3
Beskrivning (eng)
Beskrivning (eng)
The Microchip Technology VP2206N3-G is a P-Channel Enhancement-Mode Vertical DMOS FET with a maximum Drain-to-Source voltage of -60V and an On-State Drain Current of -640mA. It features low RDS(ON) of 0.9Ω, high input impedance, and excellent thermal stability, making it suitable for various applications including motor controls and power supply circuits.
The Microchip Technology VP2206N3-G is a P-Channel Enhancement-Mode Vertical DMOS FET with a maximum Drain-to-Source voltage of -60V and an On-State Drain Current of -640mA. It features low RDS(ON) of 0.9Ω, high input impedance, and excellent thermal stability, making it suitable for various applications including motor controls and power supply circuits.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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