VP2110K1-G
Tillverkare
MICROCHIP TECHNOLOGY
Datablad
Datablad
Specifikation
Specifikation
MOSFET P-CH 100V 120MA TO236AB
MOSFET P-CH 100V 120MA TO236AB
Detaljerad specifikation
Detaljerad specifikation
P-Kanal 100 V 120mA (Tj) 360mW (Ta) Ytmonterad TO-236AB (SOT23)
P-Kanal 100 V 120mA (Tj) 360mW (Ta) Ytmonterad TO-236AB (SOT23)
Beskrivning (eng)
Beskrivning (eng)
The Microchip Technology VP2110K1-G is a P-Channel MOSFET designed for high-performance applications. It features a maximum Drain-to-Source voltage (BVDSS) of -100V and an on-state resistance (RDS(ON)) of 12Ω at -5.0V, with a continuous Drain current (ID) of -120mA. This surface-mounted TO-236AB (SOT-23) device is optimized for low power drive requirements and fast switching speeds, making it suitable for various applications including motor controls and power supply circuits.
The Microchip Technology VP2110K1-G is a P-Channel MOSFET designed for high-performance applications. It features a maximum Drain-to-Source voltage (BVDSS) of -100V and an on-state resistance (RDS(ON)) of 12Ω at -5.0V, with a continuous Drain current (ID) of -120mA. This surface-mounted TO-236AB (SOT-23) device is optimized for low power drive requirements and fast switching speeds, making it suitable for various applications including motor controls and power supply circuits.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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