VP0109N3-G
Tillverkare
MICROCHIP TECHNOLOGY
Datablad
Datablad
Specifikation
Specifikation
MOSFET P-CH 90V 250MA TO92-3
MOSFET P-CH 90V 250MA TO92-3
Detaljerad specifikation
Detaljerad specifikation
P-Kanal 90 V 250mA (Tj) 1W (Tc) Genomgående hål TO-92-3
P-Kanal 90 V 250mA (Tj) 1W (Tc) Genomgående hål TO-92-3
Beskrivning (eng)
Beskrivning (eng)
The VP0109N3-G is a P-Channel Enhancement-Mode Vertical DMOS FET with a maximum Drain-to-Source Voltage (BVDSS) of -90V and an On-State Drain Current (ID(ON)) of -250mA. It features low RDS(ON) values of 6-15Ω, excellent thermal stability, and fast switching speeds, making it suitable for various applications including motor controls and power supply circuits.
The VP0109N3-G is a P-Channel Enhancement-Mode Vertical DMOS FET with a maximum Drain-to-Source Voltage (BVDSS) of -90V and an On-State Drain Current (ID(ON)) of -250mA. It features low RDS(ON) values of 6-15Ω, excellent thermal stability, and fast switching speeds, making it suitable for various applications including motor controls and power supply circuits.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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