VN2460N8-G
Tillverkare
MICROCHIP TECHNOLOGY
Datablad
Datablad
Specifikation
Specifikation
MOSFET N-CH 600V 200MA TO243AA
MOSFET N-CH 600V 200MA TO243AA
Detaljerad specifikation
Detaljerad specifikation
N-Kanal 600 V 200mA (Tj) 1.6W (Ta) ytmonterad TO-243AA (SOT-89)
N-Kanal 600 V 200mA (Tj) 1.6W (Ta) ytmonterad TO-243AA (SOT-89)
Beskrivning (eng)
Beskrivning (eng)
The VN2460N8-G is an N-Channel MOSFET designed for high-performance applications, featuring a breakdown voltage of 600V and a maximum on-state resistance (RDS(on)) of 20Ω at VGS = 10V. It supports a continuous drain current of 200mA and offers low input capacitance (CISS) of 150pF, ensuring fast switching speeds. The device is housed in a TO-243AA (SOT-89) package, making it suitable for surface-mounted applications.
The VN2460N8-G is an N-Channel MOSFET designed for high-performance applications, featuring a breakdown voltage of 600V and a maximum on-state resistance (RDS(on)) of 20Ω at VGS = 10V. It supports a continuous drain current of 200mA and offers low input capacitance (CISS) of 150pF, ensuring fast switching speeds. The device is housed in a TO-243AA (SOT-89) package, making it suitable for surface-mounted applications.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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