VN2460N3-G
Tillverkare
MICROCHIP TECHNOLOGY
Datablad
Datablad
Specifikation
Specifikation
MOSFET N-CH 600V 160MA TO92-3
MOSFET N-CH 600V 160MA TO92-3
Detaljerad specifikation
Detaljerad specifikation
N-Kanal 600 V 160mA (Tj) 1W (Ta) Genomgående hål TO-92-3
N-Kanal 600 V 160mA (Tj) 1W (Ta) Genomgående hål TO-92-3
Beskrivning (eng)
Beskrivning (eng)
The VN2460N3-G is an N-Channel Enhancement-mode Vertical DMOS FET designed for high-performance applications. It features a maximum Drain-to-Source Voltage (BVDSS) of 600V and an On-State Drain Current (ID(ON)) of 250mA. The device exhibits low RDS(ON) values of 20Ω at VGS = 10V, ensuring efficient operation. With a thermal stability range of -55°C to +150°C, it is suitable for various applications including motor controls and power supply circuits.
The VN2460N3-G is an N-Channel Enhancement-mode Vertical DMOS FET designed for high-performance applications. It features a maximum Drain-to-Source Voltage (BVDSS) of 600V and an On-State Drain Current (ID(ON)) of 250mA. The device exhibits low RDS(ON) values of 20Ω at VGS = 10V, ensuring efficient operation. With a thermal stability range of -55°C to +150°C, it is suitable for various applications including motor controls and power supply circuits.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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