VN2210N3-G
Tillverkare
MICROCHIP TECHNOLOGY
Datablad
Datablad
Specifikation
Specifikation
MOSFET N-CH 100V 1.2A TO92-3
MOSFET N-CH 100V 1.2A TO92-3
Detaljerad specifikation
Detaljerad specifikation
N-Kanal 100 V 1.2A (Tj) 740mW (Tc) Genomgående hål TO-92-3
N-Kanal 100 V 1.2A (Tj) 740mW (Tc) Genomgående hål TO-92-3
Beskrivning (eng)
Beskrivning (eng)
The VN2210N3-G is an N-Channel Enhancement-mode Vertical DMOS FET with a maximum Drain-to-Source Voltage (BVDSS) of 100V and a continuous Drain Current (ID) of 1.2A. It features low on-state resistance (RDS(on)) of 0.35Ω at VGS = 10V, fast switching speeds, and excellent thermal stability, making it suitable for various applications including motor controls and power supply circuits.
The VN2210N3-G is an N-Channel Enhancement-mode Vertical DMOS FET with a maximum Drain-to-Source Voltage (BVDSS) of 100V and a continuous Drain Current (ID) of 1.2A. It features low on-state resistance (RDS(on)) of 0.35Ω at VGS = 10V, fast switching speeds, and excellent thermal stability, making it suitable for various applications including motor controls and power supply circuits.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
Hämta lagerstatus
Kontakta säljare
Kontakta Petra eller någon annan av våra duktiga säljare. De hjälper dig att hitta rätt servicealterntativ.K