VN2210N2
Tillverkare
MICROCHIP TECHNOLOGY
Datablad
Datablad
Specifikation
Specifikation
MOSFET N-CH 100V 1.7A TO39
MOSFET N-CH 100V 1.7A TO39
Detaljerad specifikation
Detaljerad specifikation
N-Kanal 100 V 1.7A (Tj) 360mW (Tc) Genomgående hål TO-39
N-Kanal 100 V 1.7A (Tj) 360mW (Tc) Genomgående hål TO-39
Beskrivning (eng)
Beskrivning (eng)
The VN2210N2 is an N-Channel Enhancement-mode Vertical DMOS FET with a maximum Drain-to-Source Voltage (BVDSS) of 100V and a continuous Drain Current (ID) of 1.7A. It features low on-state resistance (RDS(on)) of 0.35Ω at VGS = 10V, fast switching speeds, and excellent thermal stability, making it suitable for various applications including motor controls and power supply circuits.
The VN2210N2 is an N-Channel Enhancement-mode Vertical DMOS FET with a maximum Drain-to-Source Voltage (BVDSS) of 100V and a continuous Drain Current (ID) of 1.7A. It features low on-state resistance (RDS(on)) of 0.35Ω at VGS = 10V, fast switching speeds, and excellent thermal stability, making it suitable for various applications including motor controls and power supply circuits.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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