VN10KN3-G
Tillverkare
MICROCHIP TECHNOLOGY
Datablad
Datablad
Specifikation
Specifikation
MOSFET N-CH 60V 310MA TO92-3
MOSFET N-CH 60V 310MA TO92-3
Detaljerad specifikation
Detaljerad specifikation
N-Kanal 60 V 310mA (Tj) 1W (Tc) Genomgående hål TO-92-3
N-Kanal 60 V 310mA (Tj) 1W (Tc) Genomgående hål TO-92-3
Beskrivning (eng)
Beskrivning (eng)
The VN10KN3-G is an N-Channel MOSFET with a maximum Drain-to-Source Voltage (BVDSS) of 60V and a continuous Drain Current (ID) of 310mA. It features low on-state resistance (RDS(on)) of 5Ω at VGS = 10V and fast switching speeds, making it suitable for various applications. The device operates within a temperature range of -55°C to +150°C and is housed in a TO-92-3 package.
The VN10KN3-G is an N-Channel MOSFET with a maximum Drain-to-Source Voltage (BVDSS) of 60V and a continuous Drain Current (ID) of 310mA. It features low on-state resistance (RDS(on)) of 5Ω at VGS = 10V and fast switching speeds, making it suitable for various applications. The device operates within a temperature range of -55°C to +150°C and is housed in a TO-92-3 package.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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