UPD166031AT1U-E1-AY
Tillverkare
RENESAS
Datablad
Datablad
Specifikation
Specifikation
POWER TRS MP-3ZK HIGHT SIDE IPD(
POWER TRS MP-3ZK HIGHT SIDE IPD(
Detaljerad specifikation
Detaljerad specifikation
Allmänna syften PMIC TO-252-7
Allmänna syften PMIC TO-252-7
Beskrivning (eng)
Beskrivning (eng)
The UPD166031AT1U-E1-AY from Renesas Electronics is a 2nd Generation Intelligent Power Device (IPD) designed for high-side switching applications. It features an N-channel MOSFET with built-in charge pump, low on-state resistance of 10 mΩ, and comprehensive protection mechanisms including short circuit and thermal shutdown. The device operates within a voltage range of 4.5V to 28V and is suitable for various loads, including 14V DC grounded systems.
The UPD166031AT1U-E1-AY from Renesas Electronics is a 2nd Generation Intelligent Power Device (IPD) designed for high-side switching applications. It features an N-channel MOSFET with built-in charge pump, low on-state resistance of 10 mΩ, and comprehensive protection mechanisms including short circuit and thermal shutdown. The device operates within a voltage range of 4.5V to 28V and is suitable for various loads, including 14V DC grounded systems.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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