UMH1NTN
Tillverkare
ROHM
Datablad
Datablad
Specifikation
Specifikation
TRANS 2NPN PREBIAS 0.15W UMT6
TRANS 2NPN PREBIAS 0.15W UMT6
Detaljerad specifikation
Detaljerad specifikation
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Ytmonterad UMT6
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Ytmonterad UMT6
Beskrivning (eng)
Beskrivning (eng)
The UMH1NTN from Rohm Semiconductor is a pre-biased bipolar transistor (BJT) featuring a dual NPN configuration. It is designed for surface mount applications in a compact UMT6 package. This transistor operates at a maximum voltage of 50V and can handle a collector current of up to 100mA, making it suitable for various signal amplification tasks. With a transition frequency of 250MHz and a power dissipation capability of 150mW, it is ideal for high-frequency applications, ensuring reliable performance in electronic circuits.
The UMH1NTN from Rohm Semiconductor is a pre-biased bipolar transistor (BJT) featuring a dual NPN configuration. It is designed for surface mount applications in a compact UMT6 package. This transistor operates at a maximum voltage of 50V and can handle a collector current of up to 100mA, making it suitable for various signal amplification tasks. With a transition frequency of 250MHz and a power dissipation capability of 150mW, it is ideal for high-frequency applications, ensuring reliable performance in electronic circuits.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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