UMC3NT1G
Tillverkare
ON SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
TRANS PREBIAS NPN/PNP 50V SC88A
TRANS PREBIAS NPN/PNP 50V SC88A
Detaljerad specifikation
Detaljerad specifikation
Förbise Bia Bipolär Transistor (BJT) 1 NPN, 1 PNP - Förbise (Dual) 50V 100mA 150mW Ytmonterad SC-88A (SC-70-5/SOT-353)
Förbise Bia Bipolär Transistor (BJT) 1 NPN, 1 PNP - Förbise (Dual) 50V 100mA 150mW Ytmonterad SC-88A (SC-70-5/SOT-353)
Beskrivning (eng)
Beskrivning (eng)
The UMC3NT1G is a pre-biased bipolar transistor (BJT) featuring both NPN and PNP configurations. It operates at a maximum collector-emitter voltage of 50V, with a collector current of 100mA and power dissipation of 150mW. This surface-mounted device is housed in the SC-88A package, ideal for low-power applications, simplifying circuit design and reducing component count.
The UMC3NT1G is a pre-biased bipolar transistor (BJT) featuring both NPN and PNP configurations. It operates at a maximum collector-emitter voltage of 50V, with a collector current of 100mA and power dissipation of 150mW. This surface-mounted device is housed in the SC-88A package, ideal for low-power applications, simplifying circuit design and reducing component count.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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