ULN2069B
Tillverkare
ST MICROELECTRONICS
Datablad
Datablad
Specifikation
Specifikation
TRANS 4NPN DARL 80V 1.75A 16DIP
TRANS 4NPN DARL 80V 1.75A 16DIP
Detaljerad specifikation
Detaljerad specifikation
Bipolär (BJT) Transistor Array 4 NPN Darlington (Quad) 80V 1.75A 1W Genomgående hål 16-PowerDIP (20x7.10 mm (0.79x0.28 in))
Bipolär (BJT) Transistor Array 4 NPN Darlington (Quad) 80V 1.75A 1W Genomgående hål 16-PowerDIP (20x7.10 mm (0.79x0.28 in))
Beskrivning (eng)
Beskrivning (eng)
The ULN2069B is a quad NPN Darlington transistor array designed for high current and high voltage applications. It features a maximum output current of 1.75 A, a breakdown voltage of 80 V, and includes integral suppression diodes for inductive loads. The device is housed in a 16-PowerDIP package, making it suitable for through-hole mounting.
The ULN2069B is a quad NPN Darlington transistor array designed for high current and high voltage applications. It features a maximum output current of 1.75 A, a breakdown voltage of 80 V, and includes integral suppression diodes for inductive loads. The device is housed in a 16-PowerDIP package, making it suitable for through-hole mounting.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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