TP0610K-T1-GE3
Tillverkare
SILICONIX
Datablad
Datablad
Specifikation
Specifikation
MOSFET P-CH 60V 185MA SOT23-3
MOSFET P-CH 60V 185MA SOT23-3
Detaljerad specifikation
Detaljerad specifikation
P-Kanal 60 V 185mA (Ta) 350mW (Ta) ytmonterad SOT-23-3 (TO-236)
P-Kanal 60 V 185mA (Ta) 350mW (Ta) ytmonterad SOT-23-3 (TO-236)
Beskrivning (eng)
Beskrivning (eng)
The TP0610K-T1-GE3 is a P-Channel MOSFET with a maximum Drain-Source Voltage (VDS) of 60V and a continuous Drain Current (ID) of 185mA. It features a low on-resistance (RDS(on)) of 6Ω, a low threshold voltage of -2V (typ.), and fast switching speed of 20ns (typ.). This surface-mounted device is ideal for high-side switching applications.
The TP0610K-T1-GE3 is a P-Channel MOSFET with a maximum Drain-Source Voltage (VDS) of 60V and a continuous Drain Current (ID) of 185mA. It features a low on-resistance (RDS(on)) of 6Ω, a low threshold voltage of -2V (typ.), and fast switching speed of 20ns (typ.). This surface-mounted device is ideal for high-side switching applications.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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