TIP3055
Tillverkare
CENTRAL SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
TRANS NPN 100V 15A TO218
TRANS NPN 100V 15A TO218
Detaljerad specifikation
Detaljerad specifikation
Bipolar (BJT) Transistor NPN 100 V 15 A 3MHz 90 W Genomgående hål TO-218
Bipolar (BJT) Transistor NPN 100 V 15 A 3MHz 90 W Genomgående hål TO-218
Beskrivning (eng)
Beskrivning (eng)
The TIP3055 is a high-performance NPN bipolar junction transistor (BJT) designed for general-purpose amplification. It features a maximum collector-emitter voltage (BVCBO) of 100 V, a continuous collector current (IC) rating of 15 A, and a power dissipation (PD) of 90 W. With a transition frequency (fT) of 3 MHz, it is suitable for various applications requiring robust performance in a TO-218 through-hole package.
The TIP3055 is a high-performance NPN bipolar junction transistor (BJT) designed for general-purpose amplification. It features a maximum collector-emitter voltage (BVCBO) of 100 V, a continuous collector current (IC) rating of 15 A, and a power dissipation (PD) of 90 W. With a transition frequency (fT) of 3 MHz, it is suitable for various applications requiring robust performance in a TO-218 through-hole package.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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