TIP147TU
Tillverkare
ON SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
TRANS PNP DARL 100V 10A TO3PN
TRANS PNP DARL 100V 10A TO3PN
Detaljerad specifikation
Detaljerad specifikation
Bipolar (BJT) Transistor PNP - Darlington 100 V 10 A 80 W Genomgående hål TO-3PN
Bipolar (BJT) Transistor PNP - Darlington 100 V 10 A 80 W Genomgående hål TO-3PN
Beskrivning (eng)
Beskrivning (eng)
The TIP147TU is a PNP Darlington bipolar junction transistor (BJT) designed for high-power applications. It features a maximum collector-emitter voltage of 100 V and a continuous collector current rating of 10 A, with a power dissipation capability of 80 W. This transistor is housed in a TO-3PN package, suitable for through-hole mounting, making it ideal for applications requiring high current gain and efficiency. Its Darlington configuration provides high input impedance and significant current amplification, making it suitable for various amplification and switching applications.
The TIP147TU is a PNP Darlington bipolar junction transistor (BJT) designed for high-power applications. It features a maximum collector-emitter voltage of 100 V and a continuous collector current rating of 10 A, with a power dissipation capability of 80 W. This transistor is housed in a TO-3PN package, suitable for through-hole mounting, making it ideal for applications requiring high current gain and efficiency. Its Darlington configuration provides high input impedance and significant current amplification, making it suitable for various amplification and switching applications.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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