TIP147
Tillverkare
CENTRAL SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
TRANS PNP 100V 10A TO218
TRANS PNP 100V 10A TO218
Detaljerad specifikation
Detaljerad specifikation
Bipolar (BJT) Transistor PNP 100 V 10 A 125 W Genomgående hål TO-218
Bipolar (BJT) Transistor PNP 100 V 10 A 125 W Genomgående hål TO-218
Beskrivning (eng)
Beskrivning (eng)
The TIP147 is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification. It features a maximum collector-emitter voltage (BVCBO) of 100 V, a maximum collector current (IC) of 10 A, and a power dissipation (PD) of 125 W. This through-hole device is housed in a TO-218 case, making it suitable for various electronic applications requiring reliable performance.
The TIP147 is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification. It features a maximum collector-emitter voltage (BVCBO) of 100 V, a maximum collector current (IC) of 10 A, and a power dissipation (PD) of 125 W. This through-hole device is housed in a TO-218 case, making it suitable for various electronic applications requiring reliable performance.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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