TIP142
Tillverkare
CENTRAL SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
TRANS NPN 100V 10A TO218
TRANS NPN 100V 10A TO218
Detaljerad specifikation
Detaljerad specifikation
Bipolär (BJT) Transistor NPN 100 V 10 A 125 W Genomgående hål TO-218
Bipolär (BJT) Transistor NPN 100 V 10 A 125 W Genomgående hål TO-218
Beskrivning (eng)
Beskrivning (eng)
The TIP142 is a high-performance NPN bipolar junction transistor (BJT) designed for general-purpose amplification. It features a maximum collector-emitter voltage (BVCBO) of 100 V, a collector current (IC) rating of 10 A, and a power dissipation (PD) capability of 125 W. This device is housed in a TO-218 through-hole package, making it suitable for various applications requiring robust performance.
The TIP142 is a high-performance NPN bipolar junction transistor (BJT) designed for general-purpose amplification. It features a maximum collector-emitter voltage (BVCBO) of 100 V, a collector current (IC) rating of 10 A, and a power dissipation (PD) capability of 125 W. This device is housed in a TO-218 through-hole package, making it suitable for various applications requiring robust performance.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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