TIP112G
Tillverkare
ON SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
TRANS NPN DARL 100V 2A TO220
TRANS NPN DARL 100V 2A TO220
Detaljerad specifikation
Detaljerad specifikation
Bipolär (BJT) Transistor NPN - Darlington 100 V 2 A 2 W Genomgående hål TO-220
Bipolär (BJT) Transistor NPN - Darlington 100 V 2 A 2 W Genomgående hål TO-220
Beskrivning (eng)
Beskrivning (eng)
The TIP112G is a NPN Darlington transistor designed for general-purpose amplifier and low-speed switching applications. It features a collector-emitter voltage of 100 V, a continuous collector current of 2 A, and a maximum power dissipation of 50 W. The device exhibits a high DC current gain (hFE) of 2500 at 1 A and a low collector-emitter saturation voltage (VCE(sat)) of 2.5 V at 2 A. It is housed in a TO-220 package.
The TIP112G is a NPN Darlington transistor designed for general-purpose amplifier and low-speed switching applications. It features a collector-emitter voltage of 100 V, a continuous collector current of 2 A, and a maximum power dissipation of 50 W. The device exhibits a high DC current gain (hFE) of 2500 at 1 A and a low collector-emitter saturation voltage (VCE(sat)) of 2.5 V at 2 A. It is housed in a TO-220 package.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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