TIP112
Tillverkare
ST MICROELECTRONICS
Datablad
Datablad
Specifikation
Specifikation
TRANS NPN DARL 100V 2A TO220
TRANS NPN DARL 100V 2A TO220
Detaljerad specifikation
Detaljerad specifikation
Bipolär (BJT) Transistor NPN - Darlington 100 V 2 A 2 W Genomgående hål TO-220
Bipolär (BJT) Transistor NPN - Darlington 100 V 2 A 2 W Genomgående hål TO-220
Beskrivning (eng)
Beskrivning (eng)
The TIP112 is a silicon NPN Darlington transistor designed for medium power applications. It features a maximum collector-emitter voltage of 100 V, a collector current rating of 2 A, and a total power dissipation of 50 W. Packaged in a TO-220 case, it integrates an antiparallel collector-emitter diode for enhanced performance in linear and switching applications.
The TIP112 is a silicon NPN Darlington transistor designed for medium power applications. It features a maximum collector-emitter voltage of 100 V, a collector current rating of 2 A, and a total power dissipation of 50 W. Packaged in a TO-220 case, it integrates an antiparallel collector-emitter diode for enhanced performance in linear and switching applications.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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