SSTA06HZGT116
Tillverkare
ROHM
Datablad
Datablad
Specifikation
Specifikation
TRANS NPN 80V 0.5A SST3
TRANS NPN 80V 0.5A SST3
Detaljerad specifikation
Detaljerad specifikation
Bipolär (BJT) Transistor NPN 80 V 500 mA 100 MHz 200 mW ytmonterad SST3
Bipolär (BJT) Transistor NPN 80 V 500 mA 100 MHz 200 mW ytmonterad SST3
Beskrivning (eng)
Beskrivning (eng)
The SSTA06HZGT116 is a high-performance NPN bipolar junction transistor (BJT) designed for various electronic applications. It features a maximum collector-emitter voltage of 80V and a continuous collector current rating of 500mA, making it suitable for power amplification and switching applications. With a transition frequency of 100MHz and a power dissipation capability of 200mW, this surface-mounted device (SST3) is ideal for compact circuit designs requiring efficient thermal management and high-frequency operation.
The SSTA06HZGT116 is a high-performance NPN bipolar junction transistor (BJT) designed for various electronic applications. It features a maximum collector-emitter voltage of 80V and a continuous collector current rating of 500mA, making it suitable for power amplification and switching applications. With a transition frequency of 100MHz and a power dissipation capability of 200mW, this surface-mounted device (SST3) is ideal for compact circuit designs requiring efficient thermal management and high-frequency operation.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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