SSM6N67NU,LF(T
Tillverkare
TOSHIBA
Datablad
Datablad
Detaljerad specifikation
Detaljerad specifikation
Trans MOSFET N-CH Si 30V 4A 6-Pin UDFN EP
Trans MOSFET N-CH Si 30V 4A 6-Pin UDFN EP
Beskrivning (eng)
Beskrivning (eng)
The SSM6N67NU,LF(T) from Toshiba is a high-performance N-channel MOSFET designed for efficient power management in various electronic applications. With a maximum drain-source voltage of 30V and a continuous drain current rating of 4A, this device is suitable for low-voltage applications. The 6-pin UDFN EP package ensures a compact footprint, making it ideal for space-constrained designs. Its low RDS(on) characteristics contribute to reduced power loss and improved thermal performance, enhancing overall system efficiency.
The SSM6N67NU,LF(T) from Toshiba is a high-performance N-channel MOSFET designed for efficient power management in various electronic applications. With a maximum drain-source voltage of 30V and a continuous drain current rating of 4A, this device is suitable for low-voltage applications. The 6-pin UDFN EP package ensures a compact footprint, making it ideal for space-constrained designs. Its low RDS(on) characteristics contribute to reduced power loss and improved thermal performance, enhancing overall system efficiency.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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