SSM6N57NU,LF(T
Tillverkare
TOSHIBA
Datablad
Datablad
Detaljerad specifikation
Detaljerad specifikation
Trans MOSFET N-CH 30V 4A 6-Pin UDFN EP T/R
Trans MOSFET N-CH 30V 4A 6-Pin UDFN EP T/R
Beskrivning (eng)
Beskrivning (eng)
The SSM6N57NU,LF(T) from Toshiba is a high-performance N-channel MOSFET designed for efficient power management in various electronic applications. With a maximum drain-source voltage of 30V and a continuous drain current rating of 4A, this device is suitable for low-voltage switching applications. Packaged in a compact 6-pin UDFN EP configuration, it offers excellent thermal performance and space-saving advantages. The MOSFET features low RDS(on) characteristics, ensuring minimal power loss and improved efficiency in circuit designs.
The SSM6N57NU,LF(T) from Toshiba is a high-performance N-channel MOSFET designed for efficient power management in various electronic applications. With a maximum drain-source voltage of 30V and a continuous drain current rating of 4A, this device is suitable for low-voltage switching applications. Packaged in a compact 6-pin UDFN EP configuration, it offers excellent thermal performance and space-saving advantages. The MOSFET features low RDS(on) characteristics, ensuring minimal power loss and improved efficiency in circuit designs.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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